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High Speed Devices and Circuits

Curriculum

  • 1 Section
  • 42 Lessons
  • 10 Weeks
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  • High Speed Devices and Circuits
    42
    • 2.1
      Lecture 1: Introduction to Basic Concepts
    • 2.2
      Lecture 2: Requirements of High Speed Devices, Circuits & Mat
    • 2.3
      Lecture 3: Classifications & Properties of Compound Semicond
    • 2.4
      Lecture 4: Ternary Compound Semiconductor and their Application
    • 2.5
      Lecture 5: Ternary Compound Semiconductor and their Appl – 2
    • 2.6
      Lecture 6: Crystal Structures in GaAs
    • 2.7
      Lecture 7: Dopants and impurities in GaAs and InP
    • 2.8
      Lecture 8: Brief Overview of GaAs Technology for High Speed
    • 2.9
      Lecture 9: Epitaxial Techniques for GaAs High Speed Devices
    • 2.10
      Lecture 10: MBE and LPE for GaAs Epitaxy
    • 2.11
      Lecture 11: GaAs and InP Devices for Microelectronics
    • 2.12
      Lecture 12: Metal Semiconductor
    • 2.13
      Lecture 13: Metal Semiconductor (Contd.)
    • 2.14
      Lecture 14: Metal Semiconductor (Contd.)
    • 2.15
      Lecture 15: Ohmic Contacts on Semiconductors
    • 2.16
      Lecture 16: Fermi Level Pinning & Schottky Barrier Diodes
    • 2.17
      Lecture 17: Schottky Barrier Diode
    • 2.18
      Lecture 18: Schottky Barrier Diodes
    • 2.19
      Lecture 19: Causes of Non-Idealities-Schottky Barrier Diodes
    • 2.20
      Lecture 20: MESFET Operation & I-V Characteristics
    • 2.21
      Lecture 21: MESFET I-V Characteristics Shockley’s Model
    • 2.22
      Lecture 22: MESFET Shockley’s Model and Velocity saturation
    • 2.23
      Lecture 23: MESFET Velocity Saturation effect
    • 2.24
      Lecture 24: MESFET Drain Current Saturation
    • 2.25
      Lecture 25: MESFET : Effects of channel length and gate length on IDS and gm
    • 2.26
      Lecture 26: MESFET: Effects of Velocity Saturation
    • 2.27
      Lecture 27: Velocity Field Characteristics
    • 2.28
      Lecture 28: MESFET-SAINT
    • 2.29
      Lecture 29: SELF Aligned MESFET-SAINT
    • 2.30
      Lecture 30: Hetero Junctions
    • 2.31
      Lecture 31: Hetero Junctions&HEMT(Contd)
    • 2.32
      Lecture 32: High Electron Mobility Transistor
    • 2.33
      Lecture 33: HEMT-off Voltage
    • 2.34
      Lecture 34: HEMT 1-V Characteristics and Transconductance
    • 2.35
      Lecture 35: Indium Phosphide Based HEMT
    • 2.36
      Lecture 36: Pseudomorphic HEMT
    • 2.37
      Lecture 37: Hetrojunction Bipolar Transistors(HBT)
    • 2.38
      Lecture 38: Hetrojunction Bipolar Transistors(HBT)-2(Contd)
    • 2.39
      Lecture 39: Hetrojunction Bipolar Transistors(HBT)-3(Contd)
    • 2.40
      Lecture 40: Hetrojunction Bipolar Transistors(HBT)-4(Contd)
    • 2.41
      Lecture 40: Hetrojunction Bipolar Transistors(HBT)-4(Contd)
    • 2.42
      Lecture 41: Hetro Junctions and HEMT
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Lecture 14: Metal Semiconductor (Contd.)
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Lecture 16: Fermi Level Pinning & Schottky Barrier Diodes
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