Description: High Speed Circuit and Device aims at describing Digital Integrated Circuits for high speed operation- Direct Coupled Field Effect Transistor Logic (DCFL), Schottky Diode FET Logic (SDFL). This course covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices.
Curriculum
- 1 Section
- 42 Lessons
- 10 Weeks
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- High Speed Devices and Circuits42
- 2.1Lecture 1: Introduction to Basic Concepts
- 2.2Lecture 2: Requirements of High Speed Devices, Circuits & Mat
- 2.3Lecture 3: Classifications & Properties of Compound Semicond
- 2.4Lecture 4: Ternary Compound Semiconductor and their Application
- 2.5Lecture 5: Ternary Compound Semiconductor and their Appl – 2
- 2.6Lecture 6: Crystal Structures in GaAs
- 2.7Lecture 7: Dopants and impurities in GaAs and InP
- 2.8Lecture 8: Brief Overview of GaAs Technology for High Speed
- 2.9Lecture 9: Epitaxial Techniques for GaAs High Speed Devices
- 2.10Lecture 10: MBE and LPE for GaAs Epitaxy
- 2.11Lecture 11: GaAs and InP Devices for Microelectronics
- 2.12Lecture 12: Metal Semiconductor
- 2.13Lecture 13: Metal Semiconductor (Contd.)
- 2.14Lecture 14: Metal Semiconductor (Contd.)
- 2.15Lecture 15: Ohmic Contacts on Semiconductors
- 2.16Lecture 16: Fermi Level Pinning & Schottky Barrier Diodes
- 2.17Lecture 17: Schottky Barrier Diode
- 2.18Lecture 18: Schottky Barrier Diodes
- 2.19Lecture 19: Causes of Non-Idealities-Schottky Barrier Diodes
- 2.20Lecture 20: MESFET Operation & I-V Characteristics
- 2.21Lecture 21: MESFET I-V Characteristics Shockley’s Model
- 2.22Lecture 22: MESFET Shockley’s Model and Velocity saturation
- 2.23Lecture 23: MESFET Velocity Saturation effect
- 2.24Lecture 24: MESFET Drain Current Saturation
- 2.25Lecture 25: MESFET : Effects of channel length and gate length on IDS and gm
- 2.26Lecture 26: MESFET: Effects of Velocity Saturation
- 2.27Lecture 27: Velocity Field Characteristics
- 2.28Lecture 28: MESFET-SAINT
- 2.29Lecture 29: SELF Aligned MESFET-SAINT
- 2.30Lecture 30: Hetero Junctions
- 2.31Lecture 31: Hetero Junctions&HEMT(Contd)
- 2.32Lecture 32: High Electron Mobility Transistor
- 2.33Lecture 33: HEMT-off Voltage
- 2.34Lecture 34: HEMT 1-V Characteristics and Transconductance
- 2.35Lecture 35: Indium Phosphide Based HEMT
- 2.36Lecture 36: Pseudomorphic HEMT
- 2.37Lecture 37: Hetrojunction Bipolar Transistors(HBT)
- 2.38Lecture 38: Hetrojunction Bipolar Transistors(HBT)-2(Contd)
- 2.39Lecture 39: Hetrojunction Bipolar Transistors(HBT)-3(Contd)
- 2.40Lecture 40: Hetrojunction Bipolar Transistors(HBT)-4(Contd)
- 2.41Lecture 40: Hetrojunction Bipolar Transistors(HBT)-4(Contd)
- 2.42Lecture 41: Hetro Junctions and HEMT
